PART |
Description |
Maker |
K7N163631B-QC16 K7N163631B-QFCI25 K7M161835B-QC65 |
512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7N163645M K7N161845M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7P161866A K7P161866A-HC25 K7P161866A-HC30 K7P1618 |
512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
DSK7N163601A K7N163601 K7N163601A-QFCI13 K7N163601 |
1Mx36 & 2Mx18 Flow-Through NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7Q163682A K7Q161882 K7Q161882A |
512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36 512Kx36 & 1Mx18 QDR b2 SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7P163666A-HC25 K7P163666A-HC33 K7P161866A-HC25 K7 |
1M X 18 STANDARD SRAM, 1.6 ns, PBGA119 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM 512Kx361Mx18同步流水线的SRAM 512K X 36 STANDARD SRAM, 1.5 ns, PBGA119
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM 256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes 256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7S1636U4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7M161825M K7M163625M |
512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7Q161852A |
(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|